Active matrix substrate and its manufacturing method

ABSTRACT

An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.

This application is a continuation of application Ser. No. 11/274,281,filed on Nov. 16, 2005. This application claims priority under 35 U.S.C.§ 119 to Japanese Patent Application No. 2005-022540, filed on Jan. 31,2005. The entire contents of these applications are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active matrix substrate for use indisplays such as liquid crystal displays and organic electroluminescentdisplays.

2. Description of the Background Art

Well known electro-optical displays, such as liquid crystal displays andorganic electroluminescent displays, are active matrix types which havea plurality of switching elements such as thin-film transistors (TFTs)arranged on an insulated substrate and apply voltage independently toeach pixel.

Especially in displays using liquid crystals as electro-opticalelements, it is important to achieve active matrix substrates with alarge display area of each pixel, i.e., with high aperture ratios, forbright and high-quality display.

One example of such active matrix substrates with high aperture ratioshas been suggested in Japanese Patent Application Laid-open No. 9-325330(1997) (FIGS. 1 and 2). This patent document has disclosed a structurein which an organic interlayer insulating film is formed to cover bothgate and source signal lines, and pixel electrodes are formed on theorganic interlayer insulating film. This active matrix substrate allowsthe pixel electrodes to overlap the signal lines, thereby increasing theaperture ratios of liquid crystal displays as well as shielding electricfields caused by the signal lines and thus inhibiting imperfectorientation of liquid crystals.

However, the organic interlayer insulating film in the above activematrix substrate is water absorbent and porous and thus may have anincreased moisture density.

If, in this condition, voltage is applied to TFTs, electrical chargeswill be induced on the surface of a channel region of a semiconductorlayer under the influence of polarization of the interlayer insulatingfilm resulting from moisture. This deteriorates off-currentcharacteristics of the TFTs and thereby causes display defects such asdisplay unevenness.

One example of methods to solve this problem has been suggested inJapanese Patent Application Laid-open No. 2000-22 1488 (FIGS. 1, 4, and5).

An active matrix substrate disclosed in this patent document is suchthat an inorganic passivation film of, for example, silicon nitride isformed under an organic interlayer insulating film to protect a channelregion of a semiconductor layer. Besides, the organic interlayerinsulating film is made of an organic material containing waterabsorbing or moisture adsorbent particles. This prevents deteriorationin the off-current characteristics of TFTs caused by polarizationresulting from moisture.

However, in the structure disclosed in this patent document, etching ofthe inorganic passivation film may result in excessive etching to aninsulation film located under the passivation film, thereby causingshort circuits between pixel electrodes and auxiliary capacitiveelectrodes.

Thus, in the active matrix substrate disclosed in Japanese PatentApplication Laid-open No. 2000-22 1488, it is necessary to form contactholes by, for example, dry etching the inorganic passivation film, inorder to establish connection between the drain electrodes and the pixelelectrodes. At this time, if there are pin holes in a metal film used toform source and drain electrodes, especially in areas of the metal filmwhere contact holes are formed, a gate insulating film under the metalfilm may be etched through the pin holes simultaneously as the processof removing the passivation film by dry etching. This causes the contactholes to reach the underlying auxiliary capacitive electrodes throughthe gate insulating film and thereby causes short circuits between thepixel electrodes and the auxiliary capacitive electrodes, resulting inthe occurrence of display defects.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an active matrixsubstrate with a high aperture ratio, which is capable of preventingelectrical short circuits between pixel electrodes and auxiliarycapacitive electrodes.

According to an aspect of the present invention, the active matrixsubstrate includes a substrate; gate lines and auxiliary capacitiveelectrodes; a first interlayer insulating film; source lines;semiconductor layers; drain electrodes; a second interlayer insulatingfilm; and pixel electrodes. The gate lines and the auxiliary capacitiveelectrodes are formed on the substrate. The first interlayer insulatingfilm covers the gate lines and the auxiliary capacitive electrodes. Thesource lines are formed on the first interlayer insulating film tointersect with the gate lines. The semiconductor layers constituteswitching elements at intersections of the gate lines and the sourcelines. The drain electrodes each correspond to each one of the switchingelements. The second interlayer insulating film covers the source lines,the semiconductor layers, and the drain electrodes. The pixel electrodesare connected to the drain electrodes through contact holes formed inthe second interlayer insulating film. The drain electrodes are opposedin part to the auxiliary capacitive electrodes with the first interlayerinsulating film sandwiched in between, so as to form holdingcapacitances for the pixel electrodes. The contact holes are formed toreach the drain electrodes in areas surrounded by areas where theauxiliary capacitive electrodes are formed, but not in the areas wherethe auxiliary capacitive electrodes are formed.

This active matrix substrate prevents a situation such as extension ofthe contact holes to the auxiliary capacitive electrodes and therebyprevents electrical short circuits between the pixel electrodes and theauxiliary capacitive electrodes. Further, forming the pixel electrodesto overlap the respective lines achieves a high aperture ratio.

According to another aspect of the present invention, the method ofmanufacturing a matrix substrate includes the following steps (a) to(h). The step (a) is to form gate lines and auxiliary capacitiveelectrodes on a substrate. The step (b) is to form a first interlayerinsulating film to cover the gate lines and the auxiliary capacitiveelectrodes. The step (c) is to form semiconductor layers constitutingswitching elements. The step (d) is to form source lines on the firstinterlayer insulating film to intersect with the gate lines. The step(e) is to form drain electrodes so that at least parts of the drainelectrodes are opposed to the auxiliary capacitive electrodes with thefirst interlayer insulating film sandwiched in between. The step (l) isto form a second interlayer insulating film to cover the semiconductorlayers, the source lines, and the drain electrodes. The step (g) is toform contact holes in the second interlayer insulating film to reach thedrain electrodes in areas surrounded by areas where the auxiliarycapacitive electrodes are formed, but not in the areas where theauxiliary capacitive electrodes are formed. The step (h) is to formpixel electrodes on the second interlayer insulating film to beconnected to the drain electrodes through the contact holes.

The active matrix substrate manufactured prevents a situation such asextension of the contact holes to the auxiliary capacitive electrodesand thereby prevents electrical short circuits between the pixelelectrodes and the auxiliary capacitive electrodes. Further, forming thepixel electrodes to overlap the respective lines achieves a highaperture ratio.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an active matrix substrate according to a firstpreferred embodiment;

FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;

FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;

FIGS. 4 to 8 are plan views showing the steps in the method ofmanufacturing an active matrix substrate;

FIGS. 9A to 9E are cross-sectional views showing the steps in the abovemanufacturing method, taken along line A-A of FIG. 1;

FIGS. 10A to 10F are cross-sectional views showing the steps, takenalong line A-A of FIG. 1;

FIGS. 11A to 11F are cross-sectional views showing the steps, takenalong line B-B of FIG. 1;

FIG. 12 is a plan view of an active matrix substrate according to asecond preferred embodiment;

FIG. 13 is a cross-sectional view taken along line C-C of FIG. 12;

FIG. 14 is a cross-sectional view taken along line D-D of FIG. 12;

FIGS. 15 to 20 are plan views showing the steps in the method ofmanufacturing an active matrix substrate; and

FIGS. 21A to 210 are cross-sectional views showing the steps in theabove manufacturing method, taken along line A-A of FIG. 1.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Preferred Embodiment

Now, an active matrix substrate according to a first preferredembodiment of the present invention will be described. This preferredembodiment describes an active matrix substrate for use in transmissiveliquid crystal displays.

FIG. 1 is a plan view of an active matrix substrate; FIG. 2 is across-sectional view taken along line A-A of FIG. 1; and FIG. 3 is across-sectional view taken along line B-B of FIG. 1.

In this active matrix substrate, a plurality of gate lines 2 (scanninglines) and a plurality of auxiliary capacitive electrodes 3 are formedon a transparent insulated substrate 1 (cf. FIGS. 4 and 9A). Theplurality of gate lines 2 are formed in straight lines and spaced atappropriate intervals to extend approximately parallel to each other onthe transparent insulated substrate 1. Portions of the gate lines 2 onwhich a semiconductor film 6 to be described later is formed serve asgate electrodes of thin-film transistors.

Each of the auxiliary capacitive electrodes 3 is formed in an areasurrounded by each of the gate lines 2 and each of source lines 9(signal lines) which will be described later (cf. FIGS. 4 and 9A). Inthe present example, each of the auxiliary capacitive electrodes 3 isprovided at about the center of two adjacent gate lines 2 and formedroughly in the shape of a rectangle extending along a direction ofextension of the gate lines 2 in plan view. Further, each of theauxiliary capacitive electrodes 3 is coupled and connected to adjacentauxiliary capacitive electrodes 3 in the direction of extension of thegate lines 2. The auxiliary capacitive electrodes 3 each have a hole 3 hformed therethrough.

Each of the auxiliary capacitive electrodes 3 is opposed to part of eachof drain electrodes 10, which will be described later, with a firstinterlayer insulating film 5 in between. Then, the auxiliary capacitiveelectrodes 3 and parts of the drain electrodes 10 form electrical(holding) capacitances. This allows retention of display signalpotential applied to pixel electrodes 15, which will be described later,thereby achieving a stable display.

Further, the first interlayer insulating film 5 is formed to cover thegate lines 2 and the auxiliary capacitive electrodes 3 on thetransparent insulated substrate I (cf. FIGS. 5 and 9B). On this firstinterlayer insulating film 5, the semiconductor film 6 and an ohmiccontact film 7 are formed (cf. FIGS. 5 and 9B). The semiconductor film 6is formed approximately in straight lines, and a plurality of lines ofthe semiconductor film 6 are formed approximately parallel to each otherin a direction generally orthogonal to the gate lines 2. Thesemiconductor film 6 has semiconductor forming parts 6 a which extendalong the direction of extension of the gate lines 2, at theintersections of the semiconductor film 6 and the gate lines 2. On thesemiconductor film 6, the ohmic contact film 7 is formed.

One side edges of the semiconductor forming parts 6 a are connected tosource electrodes 8 which will be described later, and the other sideedges are connected to the drain electrodes 10 which will be describedlater. Further, channel regions 11 are formed at about the centers ofthe semiconductor forming parts 6 a. This constitutes thin-filmtransistors (TFT) serving as switching elements.

In this preferred embodiment, semiconductor patterns including thesemiconductor film 6 and the ohmic contact film 7 extend under and alongthe source lines 9. That is, the semiconductor patterns extend not onlyat the intersections of the gate lines 2 and the source lines 9 formingthin-film transistors, but also extend under the source lines 9. Thus,even in the case of a break in any source line 9, a semiconductorpattern extending under that source line 9 serves as a redundant linefor the source line 9, thereby preventing an interruption of electricalsignals.

The source lines 9 and the drain electrodes 10 are formed on the firstinterlayer insulating film 5 (cf. FIGS. 6 and 9C). The plurality ofsource lines 9 are formed approximately in straight lines and extendapproximately parallel to each other along a direction intersecting withthe gate lines 2. In the present example, the source lines 9 are formedon the semiconductor film 6 and the gate lines 2. At the intersectionsof the source lines 9 and the gate lines 2, the source electrodes 8extend along the direction of extension of the gate lines 2. Thosesource electrodes 8 are connected on one side edges of the semiconductorforming parts 6 a.

The drain electrodes 10 are formed to extend over the auxiliarycapacitive electrodes 3 to the other side edges of the semiconductorforming parts 6 a. In the present example, the drain electrodes 10 areformed approximately in the shape of the letter T in plan view, andtheir portions extending in the direction of their widths extend overthe auxiliary capacitive electrodes 3 to face the auxiliary capacitiveelectrodes 3 with the first interlayer insulating film 5 in between.Those portions of the drain electrodes 10 and the auxiliary capacitiveelectrodes 3 form electrical (holding) capacitances for the pixelelectrodes 15 which will be described later.

Further, a second interlayer insulating film 12 is formed to cover thefirst interlayer insulating film 5, the semiconductor patterns, thesource electrodes 8, the source lines 9, and the drain electrodes 10(cf. FIGS. 7 and 9D). This second interlayer insulating film 12 isformed to provide a flat surface.

This second interlayer insulating film 12 has contact holes 14 formedtherein. The contact holes 14 extend through the second interlayerinsulating film 12 to reach the drain electrodes 10 (cf. FIGS. 7 and9D).

Specifically, the contact holes 14 reach the drain electrodes 10 inareas surrounded by areas where the auxiliary capacitive electrodes 3are formed, but not in the areas where the auxiliary capacitiveelectrodes 3 are formed. In the present example, the contact holes 14are formed to reach the drain electrodes 10 in areas corresponding tothe areas of the holes 3 h formed in the auxiliary capacitive electrodes3. Here, surrounding the contact holes 14 by the areas where theauxiliary capacitive electrodes 3 are formed refers not only to a formthat the whole contact portions of the contact holes 14 with the drainelectrodes 10 is surrounded from all directions by the areas where theauxiliary capacitive electrodes 3 are formed, but also to a form thatthe whole or part of the contact portions of the contact holes 14 withthe drain electrodes 10 is surrounded from two or three directions bythe areas where the auxiliary capacitive electrodes 3 are formed.

In other words, in order to ensure sufficient auxiliary capacities forthe pixel electrodes 15, the contact holes 14 are formed to reach thedrain electrodes 10 in areas in which they overlap areas where theauxiliary capacitive electrodes 3 are to be formed. The actual auxiliarycapacitive electrodes 3 are formed to avoid the areas where the contactholes 14 reach the drain electrodes 10. That is, the holes 3 h areformed.

Further, the pixel electrodes 15 are formed on the surface of the secondinterlayer insulating film 12 (cf. FIGS. 8 and 9E). In the presentexample, the pixel electrodes 15 are formed to extend almost across anentire generally rectangular area surrounded by the gate lines 2 and thesource lines 9. Those pixel electrodes 15 are connected to the drainelectrodes 10 through the contact holes 14.

Now, a method of manufacturing the active matrix substrate with theabove configuration will be described. FIGS. 4 to 8 are plan viewsshowing the steps in the manufacturing method; and FIGS. 9A to 9E arecross-sectional views showing the steps in the manufacturing method,taken along line A-A of FIG. 1.

First, as shown in FIGS. 4 and 9A, the gate lines 2 and the auxiliarycapacitive electrodes 3 are formed on the transparent insulatedsubstrate 1 serving as a substrate.

That is, a first thin metal film is formed on the transparent insulatedsubstrate 1 such as a glass substrate, and the gate lines 2 and theauxiliary capacitive electrodes 3 are formed by a first photolithographyprocess. At this time, the hole 3 h is formed in each of the auxiliarycapacitive electrodes 3.

More specifically, a chromium (Cr) film as the above thin metal film isformed to a thickness of, for example, 200 nm using known techniquessuch as sputtering using argon (Ar) gas. The sputtering condition hereis, for example, a DC magnetron sputtering technique with thefilm-deposition power density of 3 W/cm2 and the Ar gas flow rate of 40seem.

In the subsequent photolithography process, a photoresist pattern isformed, the chromium film is etched using a known solution containingammonium cerium nitrate, and the photoresist pattern is removed.Thereby, the gate lines 2 and the auxiliary capacitive electrodes 3 areformed.

Next, as shown in FIGS. 5 and 9B, the first interlayer insulating film5, the semiconductor film 6, and the ohmic contact film 7 are formed.

That is, the first interlayer insulating film 5 is formed to cover thegate lines 2 and the auxiliary capacitive electrodes 3 on thetransparent insulated substrate 1. Then, a film of semiconductor and afilm of ohmic contact are formed sequentially. Then, a secondphotolithography process removes parts of the film of semiconductor andthe film of ohmic contact, thereby forming semiconductor patternsconsisting of the semiconductor film 6 and the ohmic contact film 7 forforming thin-film transistors (TFTs) serving as switching elements.

More specifically, for example by chemical vapor deposition (CVD), asilicon nitride (SiNx: x is a positive number) film as the firstinterlayer insulating film 5 is formed to a thickness of 400 nm, anamorphous silicon (a-Si) film as the film of semiconductor is formed toa thickness of 150 nm, and an n˜ a-Si film doped with phosphorus (P)impurities as the film of ohmic contact is formed to a thickness of 30nm, sequentially in this order. Then, after a photoresist pattern isformed by photolithography, the a-Si film and the n⁺ a-Si film areetched using known techniques such as dry etching using fluorine gas.After that, the photoresist pattern is removed to form semiconductorpatterns of a predetermined shape including the semiconductor film 6 andthe ohmic contact film 7. The channel regions 11 in the semiconductorforming parts 6 a will be formed in a subsequent process.

Next, as shown in FIGS. 6 and 9C, the source lines 9, the sourceelectrodes 8, and the drain electrodes 10 are formed on the firstinterlayer insulating film 5.

That is, a second thin metal film is formed to cover the firstinterlayer insulating film 5 and the semiconductor patterns. Then, thesource lines 9, the source electrodes 8, and the drain electrodes 10 areformed by a third photolithography process.

More specifically, a chromium film is formed to a thickness of 200 nmfor example by sputtering, and a photoresist pattern is formed byphotolithography. Then, the chromium film is etched using a solutioncontaining ammonium cerium nitrate to form the source electrodes 8, thesource lines 9, and the drain electrodes 10. Further, the n⁺ a-Si film(ohmic contact film 7) between the source electrodes 8 and the drainelectrodes 10 is etched using known techniques such as dry etching usingfluorine gas, thereby to form the channel regions 11 of the thin-filmtransistors. After that, the photoresist pattern is removed.

Next, as shown in FIGS. 7 and 9D, the second interlayer insulating film12 is formed, and the contact holes 14 are formed in the secondinterlayer insulating film 12. The second interlayer insulating film 12is formed to cover the semiconductor patterns, the source. electrodes 8,the source lines 9, and the drain electrodes 10. In the present example,a first insulating film 12 a which is an inorganic insulating film isformed, and a second insulating film 12 b which is an organic insulatingfilm is formed on the first insulating film 12 a, thereby to form thesecond interlayer insulating film 12 with a two-layered structure.Alternatively, the second interlayer insulating film 12 may be of amultilayered structure including other layers, or a single-layerstructure of an inorganic insulating film such as silicon nitride orsilicon oxide. The contact holes 14 are formed with bottom surfaces,extending from the surface of the second interlayer insulating film 12to the surfaces of the drain electrodes 10. Those contact holes 14 areformed to reach the drain electrodes 10 in areas above the holes 3 hformed in the auxiliary capacitive electrodes 3.

More specifically, for example, an inorganic insulating film such asSiNx (x is a positive number) is formed to a thickness of 100 nm as thefirst insulating film 12 a. Then, using techniques such as spin coating,a photosensitive organic resin (e.g., a resin material with themanufacturer's part number PC335 developed by JSR Corporation) is coatedwith a thickness of 3.2 to 3.9 μm to form the second insulating film 12b of photosensitive organic resin. Then, contact holes 14 a are formedin the second insulating film 12 b of photosensitive organic resin by afourth photolithography process (the contact holes 14 a at this stageare shown in FIG. 9D). Those contact holes 14 a are formed at positionsabove the holes 3 h of the auxiliary capacitive electrodes 3. Then, thefirst insulating film (SiNx) 12 a under the contact holes 14 a is etchedand removed using known techniques such as dry etching using fluorinegas. This forms the contact holes 14 which extend through the first andsecond insulating films 12 a and 12 b to reach the drain electrodes 10in areas corresponding to the areas of the holes 3 h, i.e., in areaswhere the auxiliary capacitive electrodes 3 are not formed.

Finally, as shown in FIGS. 8 and 9E, the plurality of pixel electrodes15 are formed on the second interlayer insulating film 12 to beconnected to corresponding drain electrodes 10 through the contact holes14.

More specifically, a transparent conductive film is first formed on thesecond interlayer insulating film 12 and on the inner surfaces of thecontact holes 14 extending to the drain electrodes 10. The transparentconductive film is obtained by for example forming Indium-Tin oxide(ITO) containing indium oxide (In203) and Tin oxide (Sn02) to athickness of 100 nm using techniques such as sputtering. In a subsequentfifth photolithography process, after formation of a photoresistpattern, the transparent conductive film is etched using a knownsolution containing hydrochloric acid and nitric acid, and then thephotoresist pattern is removed. This forms the transparent pixelelectrodes 15. Those pixel electrodes 15 are connected to the drainelectrodes 10 through the contact holes 14.

Through the aforementioned steps, a TFT active matrix substrate ismanufactured. As opposed to this active matrix substrate, anothersubstrate is placed which includes light-shielding plates, colorfilters, opposed electrodes, orientation films, and the like, and aliquid crystal layer is placed between those substrates. This produces aliquid crystal display.

The active matrix substrate with the aforementioned configuration andits manufacturing method can achieve a high aperture ratio whilepreventing electrical short circuits between the pixel electrodes 15 andthe auxiliary capacitive electrodes 3.

The effect of preventing electrical short circuits between the pixelelectrodes 15 and the auxiliary capacitive electrodes 3 will bedescribed with reference to FIGS. 10A to 10F and FIGS. 11A to 11F. FIGS.1OA to ICE are cross-sectional views showing the steps, taken along lineA-A of FIG. 1, and FIGS. 11A to 11F are cross-sectional views showingthe steps, taken along line B-B of FIG. 1.

In the manufacture of active matrix substrates, defects such as achipped part of film or a pin hole 18 a may be caused in part of thedrain electrodes 10 as shown in FIG. 10C or 11C. Such defects can becaused for example by any particles or dust produced during theformation of the second thin metal film. The presence of such a chippedpart of film or a pin hole 18 a in part of the drain electrodes 10results in a poor coverage portion 181, of the first insulating film(SiNx) 12 a formed thereon as shown in FIG. 10D or 11D. Then, after thecontact holes 14 a are formed in the second insulating film 12 b of forexample photosensitive organic resin, the first insulating film 12 aunder the contact holes 14 a is etched and removed using techniques suchas dry etching using fluorine gas, as shown in FIGS. 10E and 11E. Atthis time, the fluorine gas reaches the underlying first interlayerinsulating film 5 through the pin holes 18 a or the like, so that thefirst interlayer insulating film 5 under the contact holes 14 is partlyremoved. That is, the contact holes 14 are formed extending from thesurface of the second interlayer insulating film 12 through the pinholes 18 a of the drain electrodes 10 to reach the first interlayerinsulating film 5.

In this case, if the auxiliary capacitive electrodes 3 were locatedunder the contact boles 14 as in conventional active matrix substrates(in other words, if the auxiliary capacitive electrodes 3 bad no holes 3h), the pixel electrodes 15 are connected to both the drain electrodes10 and the auxiliary capacitive electrodes 3 through the contact holes14. This inhibits retention of potential between the drain electrodes 10and the auxiliary capacitive electrodes 3 opposed to each other, therebycausing display defects at the corresponding pixel electrodes 15.

On the other hand, in the active matrix substrate according to thispreferred embodiment, the contact holes 14 are formed to reach the drainelectrodes 10 except in areas where the auxiliary capacitive electrodes3 are formed. That is, the auxiliary capacitive electrodes 3 are notplaced under the contact holes 14. Thus, even if the drain electrodes 10have pin holes 18 a or the like and thereby the underlying firstinterlayer insulating film 5 is etched in part, the result is that onlythe further underlying transparent insulated substrate 1 is exposedbelow the contact holes 14. Accordingly, as shown in FIG. I OF, thepixel electrodes 15 are connected only to the drain electrodes 10through the contact holes 14. This prevents a situation such as shortcircuits with the auxiliary capacitive electrodes 3.

Besides, as shown in FIG. 11F, in the area where the contact holes 14are not formed, the drain electrodes 10 and the auxiliary capacitiveelectrodes 3 are opposed to each other through the first interlayerinsulating film 5 to form electrical (holding) capacitancestherebetween. This properly maintains a signal potential applied to thepixel electrodes 15 and thereby prevents the occurrence of displaydefects.

Especially since the auxiliary capacitive electrodes 3 have holes 3 hand are formed in such a manner that the outer edges of their holes 3 hare opposed to the drain electrodes 10 around the contact portions ofthe pixel electrodes 15 and the drain electrodes 10, it is possible toform sufficient electrical (holding) capacitances for the pixelelectrodes 15 as well as to effectively prevent electrical shortcircuits between the pixel electrodes 15 and the auxiliary capacitiveelectrodes 3.

Further, as shown in FIG. 11C, even if the drain electrodes 10 havechipped parts of film or pin holes 18 a in the area where the contactholes 14 are not formed, the contact holes 14 themselves are not formedin such areas and thus the first interlayer insulating film 5 will notbe etched. This prevents short circuits between the drain electrodes 10and the auxiliary capacitive electrodes 3.

Furthermore, the poor coverage portion 18 b that may be caused in thefirst insulating film (SiNx) 12 a is completely covered with the secondinsulating film 12 b of for example photosensitive organic resinprovided thereon. This also prevents electrical short circuits betweenthe pixel electrodes 15 and the auxiliary capacitive electrodes 3 orbetween the drain electrodes 10 and the auxiliary capacitive electrodes3.

Since, as a matter of course, the pixel electrodes 15 can be placed tooverlap the various types of signal lines such as the gate lines 2 andthe source lines 9, a high aperture ratio can also be achieved.

As so far described, this preferred embodiment can prevent displaydefects resulting from electrical short circuits between the pixelelectrodes 15 and the auxiliary capacitive electrodes 3 and thus canprovide an active matrix substrate with a high yield. Further, the useof this active matrix substrate achieves a display with a high apertureratio and excellent display properties.

A problem, such as extension of the contact holes 14 to the auxiliarycapacitive electrodes 3, is likely to be caused especially if the firstinterlayer insulating film 5 is an inorganic insulating film containingsilicon nitride or silicon oxide. More specifically, the above problemis likely to be caused for example if the first interlayer insulatingfilm 5 is an inorganic insulating film containing silicon nitride orsilicon oxide and if the second interlayer insulating film 12 is aninorganic insulating film containing silicon nitride or silicon oxide,or a multilayer film consisting of an underlying layer of an inorganicinsulating film containing silicon nitride or silicon oxide and aninsulating layer formed on the underlying layer. This is because, insuch a case, the first interlayer insulating film 5 might be etchedthrough pin holes or the like during the process of etching theinorganic insulating film of the second interlayer insulating film 12.Thus, the present invention is especially effective in the case oflayered structures as described above.

Now, an active matrix substrate according to a second preferredembodiment of the present invention will be described. This preferredembodiment describes an active matrix substrate for use insemitransparent liquid crystal displays.

FIG. 12 is a plan view of an active matrix substrate; FIG. 13 is across-sectional view taken along line C-C of FIG. 12; and FIG. 14 is across-sectional view taken along line D-D of FIG. 12.

The following is a description of main differences of the active matrixsubstrate according to this second preferred embodiment from the oneaccording to the first preferred embodiment. Here, components identicalto those according to the aforementioned first preferred embodiment aredenoted by the same reference numerals, which will not be described indetail.

While in the first preferred embodiment, the pixel electrodes 15 areformed of only a transparent conductive film, pixel electrode sectionsfor pixel display in the second preferred embodiment consist of twokinds of pixel electrodes: reflecting pixel electrodes 115 a of areflection film; and transparent pixel electrodes 115 b of a transparentfilm. In the present example, the transparent pixel electrodes 115 b areformed in areas constituting approximately a half (more specifically,more than the upper half) of the pixel electrode sections, and thereflecting pixel electrodes 115 a are formed in areas constitutingapproximately another half (more specifically, less than the lower halt)of the pixel electrode sections and surrounding the transparent pixelelectrodes 115 b (cf. FIGS. 20 and 21G). The reflecting pixel electrodes115 a and the transparent pixel electrodes 115 b overlap each other inareas where the contact holes 14 are formed, at the boundariestherebetween, and at the peripheries of the transparent pixel electrodes115 b.

Further, while in the first preferred embodiment, the auxiliarycapacitive electrodes 3 are formed in lines at about the centers of thepixel electrodes 15 in order not to interfere with light transmission asmuch as possible, auxiliary capacitive electrodes 103 in the secondpreferred embodiment are formed almost across the entire area of thereflecting pixel electrodes 115 a. In the auxiliary capacitiveelectrodes 103, holes 103 h are formed at about the centers of the pixelelectrode sections for pixel display (cf. FIGS. 15 and 21A).

Further, drain electrodes 110 are formed to extend almost across theentire areas of the auxiliary capacitive electrodes 103 (cf. FIGS. 17and 21C).

In the areas forming the transparent pixel electrodes 115 b, the firstinterlayer insulating film 5 and the second interlayer insulating film12 are removed so that the transparent pixel electrodes 115 b are formedin direct contact with the transparent insulated substrate 1 (cf. FIGS.21F and 21G).

This active matrix substrate allows the auxiliary capacitive electrodes103 to be formed across the entire areas of the reflecting pixelelectrodes 115 a for reflecting light. That is, since the transparentpixel electrodes 115 b use transmitted light for image display,provision of lightproof electrodes in a layer underlying thoseelectrodes must be avoided as much as possible. On the other hand, sincethe reflecting pixel electrodes 115 a use light reflection for imagedisplay, the formation of the lightproof auxiliary capacitive electrodes103 in a layer underlying those electrodes is not a problem. Thus, theauxiliary capacitive electrodes 103 can be formed across the entireareas of the reflecting pixel electrodes 115 a. This increases the areasof the auxiliary capacitive electrodes 103 and accordingly increases theholding capacity of signal potential for pixel display, thereby allowingan improvement in display quality.

Now, a manufacturing method of this active matrix substrate will bedescribed. FIGS. 15 to 20 are plan views showing the steps in thismanufacturing method, and FIGS. 21A to 21G are cross-sectional viewsshowing the steps in the manufacturing method, taken along line C-C ofFIG. 12.

First, as shown in FIGS. 15 and 21 A, the gate lines 2 and the auxiliarycapacitive electrodes 103 are formed on the transparent insulatedsubstrate 1 (cf. hatched areas in FIG. 15).

That is, a first thin metal film is formed on the transparent insulatedsubstrate 1 such as a glass substrate, and the gate lines 2 and theauxiliary capacitive electrodes 103 are formed by a firstphotolithography process. At this time, the holes 103 h are formed inthe auxiliary capacitive electrodes 103.

More specifically, a Cr film as the above thin metal film is formed to athickness of, for example, 200 nm using known techniques such assputtering using Ar gas. The sputtering condition here is, for example,a DC magnetron sputtering technique with the film-deposition powerdensity of 3 W/cm² and the Ar gas flow rate of 40 sccm.

In the subsequent photolithography process, a photoresist pattern isformed, the Cr film is etched using a known solution containing ammoniumcerium nitrate, and then the photoresist pattern is removed. Thereby,the gate lines 2 and the auxiliary capacitive electrodes 103 are formed.

Next, as shown in FIGS. 16 and 21B, the first interlayer insulating film5, the semiconductor film 6, and the ohmic contact film 7 are formed.

That is, the first interlayer insulating film 5 is formed to cover thegate lines 2 and the auxiliary capacitive electrodes 103 on thetransparent insulated substrate 1. Then, a film of semiconductor and afilm of ohmic contact are formed sequentially. Then, a secondphotolithography process removes parts of the film of semiconductor andthe film of ohmic contact to form semiconductor patterns consisting ofthe semiconductor film 6 and the ohmic contact film 7 for formingthin-film transistors (TFTs) serving as switching elements.

More specifically, for example by chemical vapor deposition (CVD), asilicon nitride (SiNx: x is a positive number) film as the firstinterlayer insulating film 5 is formed to a thickness of 400 nm, anamorphous silicon (a-Si) film as the film of semiconductor is formed toa thickness of 150 nm, and an n⁺ a-Si film doped with phosphorus (P)impurities as the film of ohmic contact is formed to a thickness of 30nm, sequentially in this order. Then, after a photoresist pattern isformed by photolithography, the a-Si film and the n⁺ a-Si film areetched using known techniques such as dry etching using fluorine gas.Thereafter, the photoresist pattern is removed to form the semiconductorpatterns of a predetermined shape including the semiconductor film 6 andthe ohmic contact film 7. The channel regions 11 in the semiconductorforming parts 6 a will be formed in a subsequent process.

As described in the first preferred embodiment, the semiconductorpatterns including the semiconductor film 6 and the ohmic contact film 7extend under and along the source lines 9 and thus serve as redundantlines for the source lines 9 as in the first preferred embodiment.

Next, as shown in FIGS. 17 and 21C, the source lines 9, the sourceelectrodes 8, and the drain electrodes 110 are formed on the firstinterlayer insulating film 5.

That is, a second thin metal film is formed to cover the firstinterlayer insulating film 5 and the semiconductor patterns. Then, thesource lines 9, the source electrodes 8, and the drain electrodes 110are formed by a third photolithography process.

More specifically, a Cr film is formed to a thickness of 200 rim, forexample by sputtering, and a photoresist pattern is formed byphotolithography. Then, the Cr film is etched using a solutioncontaining ammonium cerium nitrate to form the source electrodes 8, thesource lines 9, and the drain electrodes 110. Further, the n˜ a-Si film(ohmic contact film 7) between the source electrodes 8 and the drainelectrodes 110 is etched using known techniques such as dry etchingusing fluorine gas, thereby to form the channel regions 11 of thin-filmtransistors. After that, the photoresist pattern is removed.

Next, as shown in FIGS. 18, 21D, and 21E, the second interlayerinsulating film 12 is formed, in and through which then concave cut-outpattern holes 116 a and the contact holes 14 a are formed.

That is, the second interlayer insulating film 12 is formed to cover thesemiconductor patterns, the source electrodes 8, the source lines 9, andthe drain electrodes 110. In the present example, the first insulatingfilm 12 a, which is an inorganic insulating film, is formed, and thesecond insulating film 12 b, which is an organic insulating film, isformed on the first insulating film 12 a, thereby to form the secondinterlayer insulating film 12 with a two-layered structure.

The cut-out pattern holes 116 are formed by removing the firstinterlayer insulating film 5 and the second interlayer insulating film12 in appropriate areas to expose the transparent insulated substrate 1(cf. FIG. 21E).

The contact holes 14 are formed with bottom surfaces, extending from thesurface of the second interlayer insulating film 12 to the surfaces ofthe drain electrodes 110. Those contact holes 14 are formed to reach thedrain electrodes 110 in the areas above the holes 103 h formed in theauxiliary capacitive electrodes 103 (cf. FIG. 21E).

More specifically, for example, an inorganic insulating film such asSiNx (x is a positive number) is formed to a thickness of 100 rim as thefirst insulating film 12 a. Then, using techniques such as spin coating,a photosensitive organic resin (e.g., a resin material with themanufacturer's part number PC335 developed by JSR Corporation) is coatedwith a thickness of 3.2 to 3.9 μm to form the second insulating film 12b of photosensitive organic resin. Then, the contact holes 14 a andcut-out pattern holes 116 a are formed in the second insulating film 12b of photosensitive organic resin by a fourth photolithography process(the contact holes 14 a and the cut-out pattern holes 116 a at thisstage are shown in FIG. 21D). Those contact holes 14 a are formed atpositions above the holes 103 h of the auxiliary capacitive electrodes103. The cut-out pattern holes 116 a are formed to extend across thearea where the transparent pixel electrodes 115 b are formed.

Then, using known techniques such as dry etching using fluorine gas, thefirst insulating film (SiNx) under the contact holes 14 a is etched andremoved, and the first insulating film (SiNx) under the cut-out patternholes 116 a is etched and removed (cf. FIG. 21E). This forms the contactholes 14 which extend through the second interlayer insulating film 12to reach the drain electrodes 110 in areas corresponding to the areas ofthe holes 103 h, and also forms the cut-out pattern holes 116 whichextend through the second interlayer insulating film 12 and the firstinterlayer insulating film 5 to reach the transparent insulatedsubstrate 1 in areas corresponding to the transparent pixel electrodes115 b.

Thereafter, a plurality of pixel electrode sections are formed whichinclude the transparent pixel electrodes 115 b and the reflecting pixelelectrodes 115 a.

That is, as shown in FIGS. 19 and 21F, a transparent conductive film isformed on the transparent insulated substrate I and the secondinterlayer insulating film 12, and the transparent pixel electrodes 115b as first pixel electrodes are formed in areas of transparent pixels bya fifth photolithography process. Those transparent pixel electrodes 115b are formed in areas where pixel display is done by transmission out ofareas (square areas in the present example) forming pixels, and extendto the insides of the contact holes 14 so as to be connected to thedrain electrodes 110 through the contact boles 14.

More specifically, the transparent conductive film is obtained, forexample by forming Indium-Tin oxide (ITO) containing indium oxide(In₂O₃) and Tin oxide (SnO₂) to a thickness of 100 rim using techniquessuch as sputtering. In the fifth photolithography process, afterformation of a photoresist pattern, the transparent conductive film isetched using a known solution containing hydrochloric acid and nitricacid, and then the photoresist pattern is removed. This forms thetransparent pixel electrodes 115 b.

Then, as shown in FIGS. 20 and 21 G, a thin metal film with highreflectance properties is formed, from which then the reflecting pixelelectrodes 115 a as second pixel electrodes are formed by a sixthphotolithography process.

More specifically, a thin metal film with high reflectance propertieshas a two-layered structure which is obtained first by formingmolybdenum (Mo) or an Mo alloy doped with a small amount of otherelements or the like to a thickness of 100 rim using techniques such assputtering, and then by forming thereon aluminum (Al) or an Al alloydoped with a small amount of other elements to a thickness of 300 nm asa reflection film with high reflection properties. Examples of the Moalloy include a MoNb alloy doped with niobium (Nb) and a MoW alloy dopedwith tungsten (W). Examples of the Al alloy include an AlNd alloy dopedwith 0.5 to 3 wt % of neodymium (Nd). In this way, a two-layered thinmetal film with high reflection properties, such as AlNdIMoNb orAlNd/MoW, is formed.

In the subsequent sixth photolithography process, after photoresistpatterning, the above two-layered film is etched using a solutioncontaining phosphoric acid, nitric acid, and acetic acid, and then thephotoresist is removed, thereby to form the reflecting pixel electrodes115 a.

Here, the underlying MoNb or MoW alloy film as the underlying layer ofthe reflecting pixel electrodes 115 a serves as a barrier layer in orderto prevent breaks caused by differences in level on the bottom surfacesof the contact holes 14 and to prevent direct contact of the AlNd filmwith the ITO film forming the underlying transparent pixel electrodes115 b.

That is, if the AlNd film is formed directly on the surface of the ITOfilm forming the transparent pixel electrodes 115 b without forming theMoNb or MoW alloy film therebetween, an AlOx (aluminum oxide) reactionlayer is generated at the interface between ITO and AlNd. This causes aproblem of increasing electrical resistance and thereby preventingtransmission of electrical signals from the transparent pixel electrodes115 b to the reflecting pixel electrodes 115 a, resulting in displaydefects. Further, in the step of photoresist development during thesixth photolithography process, electrochemical reaction may be causedbetween ITO and AlNd in a developing solution, which may result inreducing corrosion of the transparent pixel electrodes 115 b. Thus, theMoNb or MoW alloy film is provided between the AlNd film and the ITOfilm forming the transparent pixel electrodes 115 b to avoid directcontact therebetween. This ensures electrical connections between thetransparent pixel electrodes 115 b and the reflecting pixel electrodes115 a and prevents the occurrence of reducing corrosion of thetransparent pixel electrodes 115 b in a developing solution.

Through the aforementioned steps, the active matrix substrate for use insemitransparent liquid crystal displays is manufactured. As opposed tothis active matrix substrate, another substrate is placed which includeslight-shielding plates, color filters, opposed electrodes, orientationfilms, and the like, and a liquid crystal layer is further providedbetween those substrates. This produces a semitransparent liquid crystaldisplay that allows both transmission and reflection display.

According to the active matrix substrate with the aforementionedconfiguration and its manufacturing method, since the auxiliarycapacitive electrodes 103 have the holes 103 h formed therethrough, andthe contact holes 14 are formed to reach the drain electrodes 110 inareas corresponding to the areas of the holes 103 h, even if the drainelectrodes 110 have defects such as chipped parts of film or pin holes,it is possible, for the same reason as described in the first preferredembodiment, to prevent electrical short circuits between the reflectingand transparent pixel electrodes 115 a, 115 b and the auxiliarycapacitive electrodes 103 and thereby to prevent display defectsresulting from such short circuits. Accordingly, a TFT active matrixsubstrate with a high yield can be produced.

Further, the use of this TFT active matrix substrate allows theproduction of displays with high aperture ratios and excellent displayproperties.

Especially, since in the second preferred embodiment, the pixelelectrode sections for pixel display include the reflecting pixelelectrodes 115 a and the transparent pixel electrodes 115 b, theauxiliary capacitive electrodes 103 can be formed across the entireareas of the reflecting pixel electrodes 115 a. This increases the areasof the auxiliary capacitive electrodes 103 and accordingly furtherincreases the auxiliary capacity, thereby achieving a configuration withmore excellent display properties.

Modifications

While examples of using a Cr thin metal film as a conductive film havebeen shown and described herein, the present invention is not limitedthereto but also allows the use of various kinds of conductive film. Forexample, Mo or a Mo alloy, or Al or an Al alloy may be used, in whichcase electrical resistances of lines and electrodes can be reduced toapproximately one half to one fourth, as compared with the case of a Crthin film.

However, in the case of using a Mo or Al alloy, if the interlayerinsulating film has defects or the like, the etching of the transparentpixel electrodes 115 b of an ITO film with a solution containinghydrochloric acid and nitric acid may cause the solution to penetrateinto the underlying layer and thereby cause excessive corrosion of theMo or Al alloy, which may result in an increase in the percent defectiverate. In such a case, the transparent pixel electrodes 115 b shouldpreferably be formed of a transparent conductive film that is in anamorphous state. This is because, since the transparent conductive filmin an amorphous state is chemically unstable and thus can be etched forexample with weak acid such as oxalic acid (which will not corrode a Moor Al alloy), it is possible to prevent corrosion breaks in theunderlying Mo or Al alloy due to penetration of the solution.

On the other hand, if the transparent conductive film remains amorphousand if there is a subsequent step of forming the reflecting pixelelectrodes II 5 a as in the second preferred embodiment of the presentinvention, etching of a thin metal or laminated film of the reflectingpixel electrodes 115 a, such as AlNdIMoNb or AlNdIMoW, may causecorrosion of the amorphous transparent conductive film of thetransparent pixel electrodes 115 b. Thus, in this case, it is desirable,after forming the transparent pixel electrodes 115 b in an amorphousstate, to convert the electrodes into a chemically stable crystallinestate.

Preferable examples of such a transparent conductive film include aternary transparent conductive film which is converted to an amorphousstate by doping ITO (In₂O₃+SnO₂) with zinc oxide (ZnO); and an ITO filmwhich is converted to an amorphous state by being formed in a mixed gasobtained by mixing Ar and oxygen (O₂) gases, which are well known assputtering gases, and further adding hydrogen (H2) and water (H₂O)gases. The amorphous transparent conductive film according to theaforementioned preferred embodiments can be converted to a chemicallystable crystalline state, by heating at temperatures usuallyapproximately between 170° and 250° C. Thus, in the first preferredembodiment, heating is applied after the step of FIG. 9E. In the secondpreferred embodiment, heating at a temperature of approximately 200° C.is applied after the step of FIG. 21F, or an auxiliary substrate beatingprocess or the like in forming the reflecting pixel electrodes 115 a bythird thin metal sputtering is used. Thereby, the transparent pixelelectrodes of the transparent conductive film can be converted to achemically stable crystalline state.

While the active matrix substrates for use in transparent orsemitransparent liquid crystal displays have been described in the firstand second preferred embodiments, the present invention is alsoapplicable to active matrix substrates for use in total-reflectionliquid crystal displays including reflecting pixel electrodes whichtotally reflect light from pixels. In this case, the present inventioncan achieve more effective effects.

Further, the present invention is not limited to the application toactive matrix substrates for use in liquid crystal displays, but is alsoapplicable to electro-optical displays such as organicelectroluminescent displays. That is, the present invention isapplicable to various kinds of displays having electro-optical elementswhich convert electrical functions such as current supply and voltageapplication to optical functions such as transmittance and luminance.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

1. An active matrix substrate comprising: a substrate; gate lines andauxiliary capacitive electrodes formed on said substrate; a firstinterlayer insulating film covering said gate lines and said auxiliarycapacitive electrodes; source lines formed on said first interlayerinsulating film to intersect with said gate lines; semiconductor layersconstituting switching elements at intersections of said gate lines andsaid source lines; drain electrodes each corresponding to each one ofsaid switching elements; a second interlayer insulating film formed on alayer above said source lines, said semiconductor layers and drainelectrodes; and pixel electrodes including reflecting pixel electrodesand transparent pixel electrodes, and connected to said drain electrodesthrough contact holes formed in said second interlayer insulating film,wherein: said drain electrodes being opposed in part to said auxiliarycapacitive electrodes with said first interlayer insulating filmsandwiched in between; said contact holes being formed to reach saiddrain electrodes in areas surrounded by areas where said auxiliarycapacitive electrodes are formed, but not in the areas where saidauxiliary capacitive electrodes are formed; and the areas surrounded byareas where said auxiliary capacitive electrodes are formed being in astate where the whole or part of the contact portions of said contactholes with said drain electrodes is surrounded from two or threedirections by the areas where the auxiliary capacitive electrodes areformed.
 2. The active matrix substrate according to claim 1, whereinsaid auxiliary capacitive electrodes are formed below said reflectingpixel electrodes.
 3. The active matrix substrate according to claim 1,wherein said auxiliary capacitive electrodes are formed across theentire area of said reflecting pixel electrodes.
 4. The active matrixsubstrate according to claim 1, wherein said reflecting pixel electrodeshave a structure in which a film of aluminum or an Al alloy is formed ona film of molybdenum or an Mo alloy.
 5. The active matrix substrateaccording to claim 1, wherein said first interlayer insulating film isformed of an amorphous insulating film containing silicon nitride orsilicon oxide.
 6. A method of manufacturing an active matrix substrate,comprising the steps of: (a) forming gate lines and auxiliary capacitiveelectrodes on a substrate; (b) forming a first inlayer insulating filmto cover said gate lines and said auxiliary capacitive electrodes; (c)forming semiconductor layers constituting switching elements; (d)forming source lines on said first interlayer insulating film tointersect with said gate lines; (e) forming a drain electrodes so thatat least parts of said drain electrodes are opposed to said auxiliarycapacitive electrodes with said first interlayer insulating filmsandwiched in between; (f) forming a second interlayer insulting film tocover said semiconductor layers; and source lines, and said drainedelectrodes; (g) forming contact holes in a said second interlayerinsulating film to reach said drain electrodes in areas surrounded byareas where said auxiliary capacitive electrodes are formed, but not inthe areas where said auxiliary capacitive electrodes are formed; and (h)forming pixel electrodes on said second interlayer insulating film toinclude reflecting pixel electrodes and transparent pixel electrodesdirectly connected to each other, and to be connected to said drainelectrodes through said contact holes, wherein the areas surround byareas where said auxiliary capacitive electrodes are formed being in astate where the whole or part of the contact portions of said contactholes with said drain electrodes is surrounded from two or threedirections by the areas where the auxiliary capacitive electrodes areformed.